Fraunhofer Group for Microelectronics in cooperation with the Leibniz institutes IHP and FBH
Fraunhofer Group for Microelectronics in cooperation with the Leibniz institutes IHP and FBH

Our cross-location competencies in Power Electronics

© Fraunhofer IAF

Power Electronics

The technology platform "Power Electronics" offers pro­found in-depth knowledge in materials research and pro­cessing of wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Compa­red to conventional Si-based power electronics, the WBG semiconductors enable devices which are more power efficient and have a leaner module / system design even at higher operating temperatures. In our unique cleanroom facilities, we are able to build devices in Si-based, SiC-based or GaN-based technologies.

 

FMD offers profound in-depth knowledge in Materials Research and Processing of Wide Bandgap (WBG) Semiconductors such as silicon carbide (SiC) and gallium nitride (GaN):

  • Fully integrated 150 mm line to manufacture state-of-the-art SiC devices; integration on cost-efficient 200 mm Si substrates for GaN-based devices  
  • Ability to build devices in Si-based, SiC-based or GaN-based technologies
  • New device concepts, such as vertical GaN-transistors, Al-GaN-/GaN-based devices for fast switching and future WBG semiconductors like aluminium nitride (AlN) and Gallium oxide (Ga2O3)  
  • Integration of single devices into modules and systems: heterogeneous-system-integration as well as characterization of single devices, integrated modules or complete systems
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Flyer Power Electronics

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© Fraunhofer IZM

GaN Chip Prepackage

Module eliminates packaging barriers combined with an innovative metalized transfer mold.

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© MEV Verlag

Drive Unit for Fully Electric Vehicles

Compact, smart and reliable drive unit for fully electric vehicles

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© Fraunhofer IISB

Multi-Level Converter

A key technology for efficient and cost-effective power electronic systems

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600 V Full Bridge Cell for Modular Converters

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Monolithically integrated GaN power circuits

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Wide-Bandgap Power Electronics

With its 13 member institutes of the Fraunhofer-Gesellschaft and Leibniz Association, the Research Fab Microelectronics Germany (FMD) demonstrates research achievements of international excellence. In this way, FMD contributes to Germany and Europe, taking a leading position in research and development. Some selected research highlights and lighthouse projects in the field of wide-bandgap power electronics can be found below.

Lists of all publications within FMD for the Power Electronics Technology Platform:

Europe's Only (and Internationally Recognized) 150 mm Research and Development Platform for 4H-SiC Components

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Using the example of the Backend of Line Processing for SiC module set up at Fraunhofer IISB, we would like to show how local investments are used to expand the technological capabilities of the institutes and thus stimulate cross-disciplinary cooperation.

Tailor-made SiC services

  • Demonstration of SiC JBS diodes with back-thinned substrates with US-American partner
  • Demonstration of hybrid and fully integrated switch-disconnectors with German/Japanese consortium using SiC JFET technology (Patents: DE 102016207859 B3 + Families EP/US, US 000010325984 B2)
  • Demonstration SiC-CMOS amplifier circuits for high temperature applications

Cooperations:

  • EU project SPEED (EU-FP7)
  • BMBF project SiC DC-Breaker
  • EU project: iREL4.0 (H2020, ECSEL/BMBF)

Publications:

  • Rusch O, et al. (2019): Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes, Silicon Carbide and Related Materials 2018, in 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018). doi: 10.4028/www.scientific.net/MSF.963.549
  • Rusch O, et al. (2019): Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology, in International Conference on Silicon Carbide & Related Materials (ECSCRM 2019). Online abrufbar unter: http://publica.fraunhofer.de/dokumente/N-565413.html
  • Abbasi A, et al. (2019): Characterization of a Silicon Carbide BCD Process for 300°C Circuits, in IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2019. doi: 10.1109/WiPDA46397.2019.8998920
  • Albrecht M, et al. (2019): Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation, in 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018). doi: 10.4028/www.scientific.net/MSF.963.827
  • Albrecht, M. (2017): Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET, in 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016). doi: 10.4028/www.scientific.net/MSF.897.665

Further information:

Custom-Tailored SiC-Services

Examples:

MONOLITHICALLY INTEGRATED SWITCH-DISCONNECTOR IN JFET-BASED SIC TECHNOLOGY

LATERAL SIC POWER TRANSISTORS IN INTEGRATED CIRCUITS (SIC HV-CMOS TECHNOLOGY)

Worldwide Only Research Cooperation With Complete Production Chain for All Assembly Techniques of Power Modules

Test equipment hetero-highly integrated power electronics: Switching Cell in Package. Development of highly integrated power electronic circuits by means of suitable experimental equipment. Through better knowledge of the mechanisms of action, technology and performance can be advanced faster.
© Fraunhofer IZM
Test equipment hetero-highly integrated power electronics: Switching Cell in Package. Development of highly integrated power electronic circuits by means of suitable experimental equipment. Through better knowledge of the mechanisms of action, technology and performance can be advanced faster.
  • Within the power electronics technology platform, we offer a complete production chain for all assembly techniques of power modules
  • Cross-technology design of modules with focus on fast switching (WBG) and low-inductive design
  • Development and application of new packaging technologies
  • Leading provider of switching loss measurements on the fastest semiconductors with highest accuracy
  • All tests for the qualification of modules

Cooperations:

BMBF supported project SiCModul
BMBF supported project SiCEffizient

Publications:

  • Klein K, et al. (2020): Low inductive full ceramic SiC power module for high-temperature automotive applications,  in PCIM 2020, pp. 388-395, Nürnberg. Print ISBN: 978-3-8007-5245-4, online abrufbar unter: https://ieeexplore.ieee.org/document/9178026
  • Klein K, et al. (2020): Power module design for utilizing of WBG switching performance, in PCIM 2020, pp. 936-943, Nürnberg. ISBN 978-3-8007-4938-6, online abrufbar unter: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8767606
  • Kuczmik A, et al. (2020): Double pulse vs. indirect measurement: Characterizing switching losses of integrated power modules with wide bandgap semiconductors, in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems. Online abrufbar unter: https://ieeexplore.ieee.org/document/9097719

Further Information:

Examples:

FUCERA - INTEGRATED SIC POWER MODULE WITH INTEGRATED CERAMIC COOLER

SICMODUL - SIC-BASED MODULAR POWER ELECTRONICS FOR FAIL-SAFE DRIVE TECHNOLOGY